MOSFET 35V N-Chnl
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 35 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 13 A | ||
Resistance Drain-Source RDS (on) : | 60 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
Package / Case : | TO-220 | Packaging : | Tube |
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 35 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b) VGS=10V; TA=25°C (b) |
ID | 13 3.5 |
A |
Pulsed Drain Current (c) | IDM | 30 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.4 | A |
Pulsed source current (body diode) (c) | ISM | 30 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 20 160 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.5 12 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
Part Number | ZXM64N035L3 |
Config/ Polarity |
N |
PD (W) |
20 |
VDSS (V) |
35 |
VGSS (+/-) (V) |
20 |
ID (A) |
13 |
RDS(on) Max () @ VGS; 1.8V | |
RDS(on) Max () @ VGS; 2.5V | |
RDS(on) Max () @ VGS; 4.0V | |
RDS(on) Max () @ VGS; 4.5V | 0.07 |
RDS(on) Max () @ VGS; 5V | |
RDS(on) Max () @ VGS; 10.0V | 0.06 |
VGS(th) (V) |
1 |
Ciss (typ) (pF) |
970 |
Qg (typ) (nC) @ VGS; 4.5V |
|
Qg (typ) (nC) @ VGS; 5V |
|
Qg (typ) (nC) @ VGS; 10V |
27 (max) |