Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT223 packageApplication· 50W Class D Audio Output Stage· Motor ControlPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS 35 V Gate Source Voltage VGS ± 20 V Continu...
ZXM64N035G: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT223 packageApplication· 50W Class D Audio Output Stage· Motor ControlPinoutSpecifications PARAMETER SYMBO...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 35 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) |
ID | 6.7 5.4 4.8 |
A |
Pulsed Drain Current (c) | IDM | 30 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.4 | A |
Pulsed source current (body diode) (c) | ISM | 30 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 2.0 16 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 3.9 31 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of high cell density planar MOSFETs ZXM64N035G from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.