ZXM64N02XTA

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5.4 A
Resistance Drain-Source RDS (on) : 40 mOhms at 4.5 V
Package / Case : MSOP


Features:

· Low on-resistance
· Fast switching speed
· Low threshold
· Low gate drive
· Low profile SOIC package


Application

· DC - DC Converters
· Power Management Functions
· Disconnect switches
· Motor control


Pinout




Specifications

PARAMETER	SYMBOL	LIMIT	UNIT
Drain-Source Voltage	VDSS	20	V
Gate- Source Voltage	VGS	± 12	V
Continuous Drain Current (VGS=4.5V; TA=25°C)(b) (VGS=4.5V; TA=70°C)(b)	ID	5.4 4.3	A
Pulsed Drain Current (c)	IDM	30	A
Continuous Source Current (Body Diode)(b)	IS	2.4	A
Pulsed Source Current (Body Diode)(c)	ISM	30	A
Power Dissipation at TA=25°C (a) Linear Derating Factor	PD	1.1 8.8	W mW/°C
Power Dissipation at TA=25°C (b) Linear Derating Factor	PD	1.8 14.4	W mW/°C
Operating and Storage Temperature Range	Tj:Tstg	-55 to +150	°C

Description

This new generation of high density MOSFETs ZXM64N02XTA from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.