Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23-6 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDSS -20 V Gate S...
ZXM62P02E6: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23-6 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPino...
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PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | -20 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain Current VGS=4.5V; TA=25°C(b) VGS=4.5V; TA=70°C(b) |
ID | -2.3 -1.7 |
A |
Pulsed Drain Current (c) | IDM | -13 | A |
Continuous Source Current (Body Diode) (b) | IS | -1.9 | A |
Pulsed source current (body diode) (c) | ISM | -13 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1.1 8.8 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.7 13.6 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
Part Number | ZXM62P02E6 |
Config/ Polarity |
P |
PD (W) |
1.7 |
VDSS (V) |
-20 |
VGSS (+/-) (V) |
12 |
ID (A) |
-2.3 |
RDS(on) Max() @ VGS;-1.8V | - |
RDS(on) Max() @ VGS;-2.5V | - |
RDS(on) Max() @ VGS;-2.7V | 0.375 |
RDS(on) Max() @ VGS -4.5V | 0.2 |
RDS(on) Max() @ VGS;-10V | - |
VGS(th) (V) |
-0.7(Min) |
Ciss (typ) (pF) |
320 |
Qg (typ) (nC) @VGS 4.5V |
5.8(Max) |
Qg (typ) (nC) @VGS 10V |
- |
This new generation of high density MOSFETs ZXM62P02E6 from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.