Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT223 packageApplication· DC-DC Converters· Audio Output Stage· Relay and Soleniod driving· Motor ControlPinoutSpecifications Part Number ZXM62N03G Config/Polarity N PD(W) 3.9 VDSS (V) 30 ...
ZXM62N03G: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT223 packageApplication· DC-DC Converters· Audio Output Stage· Relay and Soleniod driving· Motor ControlPinoutSp...
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Part Number | ZXM62N03G |
Config/ Polarity |
N |
PD (W) |
3.9 |
VDSS (V) |
30 |
VGSS (+/-) (V) |
20 |
ID (A) |
4.7 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | |
RDS(on) Max() @ VGS; 2.5V | |
RDS(on) Max() @ VGS; 2.7V | |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.15 |
RDS(on) Max() @ VGS; 10.0V | 0.11 |
VGS(th) (V) |
1 |
Ciss (typ) (pF) |
380 |
Qg (typ) (nC) @ VGS; 4.5V |
|
Qg (typ) (nC) @ VGS; 10V |
9.6 (max) |
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 30 | V |
Gate Source Voltage | VGS | ± 20 | V |
Continuous Drain CurrentVGS=10V; TA=25°C (b) VGS=10V; TA=70°C (b) VGS=10V; TA=25°C (a) |
ID | 4.7 3.8 3.4 |
A |
Pulsed Drain Current (c) | IDM | 16 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.6 | A |
Pulsed source current (body diode) (c) | ISM | 16 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 2.0 16 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 3.9 31 |
W mW/°C |
Operating and Storage Temperature Range | Tj:Tstg | -55 to +150 | °C |
This new generation of High Density MOSFETs ZXM62N03G from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.