ZXM62N03E6TA

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain
Continuous Drain Current : 3.2 A
Resistance Drain-Source RDS (on) : 0.15 Ohms
Package / Case : SOT-23-6


Features:

• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• SOT23-6 package


Application

• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control


Pinout




Specifications

PARAMETER	SYMBOL	LIMIT	UNIT
Drain-Source Voltage Gate Source Voltage	VDSS VGS	30 ±20	V V
Continuous Drain Current (VGS=10V; TA=25)(b) (VGS=10V; TA=70)(b)	ID	3.2 2.6	A
Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at TA=25 (a) Linear Derating Factor	IDM IS ISM PD	18 2.1 18 1.1 8.8	A A A W mW/
Power Dissipation at TA=25 (b) Linear Derating Factor Operating and Storage Temperature Range	PD Tj:Tstg	1.7 13.6 -55 to +150	W mW/

Description

This new generation of high density MOSFETs ZXM62N03E6TA from Zetex utilise a uniquestructure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.