Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23-6 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPinoutSpecifications Part Number ZXM62N02E6 Config/Polarity N PD(W) 1.7 VDSS (V) 20...
ZXM62N02E6: Features: · Low on-resistance· Fast switching speed· Low threshold· Low gate drive· SOT23-6 packageApplication· DC - DC Converters· Power Management Functions· Disconnect switches· Motor controlPino...
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Part Number | ZXM62N02E6 |
Config/ Polarity |
N |
PD (W) |
1.7 |
VDSS (V) |
20 |
VGSS (+/-) (V) |
12 |
ID (A) |
3.2 |
RDS(on) Max() @ VGS; 1.5V | |
RDS(on) Max() @ VGS; 1.8V | |
RDS(on) Max() @ VGS; 2.5V | |
RDS(on) Max() @ VGS; 2.7V | 0.125 |
RDS(on) Max() @ VGS; 4.0V | |
RDS(on) Max() @ VGS; 4.5V | 0.1 |
RDS(on) Max() @ VGS; 10.0V | |
VGS(th) (V) |
0.7 |
Ciss (typ) (pF) |
480 |
Qg (typ) (nC) @ VGS; 4.5V |
6.3 (max) |
Qg (typ) (nC) @ VGS; 10V |
PARAMETER | SYMBOL | LIMIT | UNIT |
Drain-Source Voltage | VDSS | 20 | V |
Gate Source Voltage | VGS | ± 12 | V |
Continuous Drain Current (VGS=4.5V; TA=25°C)(b) (VGS=4.5V; TA=70°C)(b) |
ID | 3.2 2.6 |
A |
Pulsed Drain Current (c) | IDM | 18 | A |
Continuous Source Current (Body Diode) (b) | IS | 2.1 | A |
Pulsed Source Current (Body Diode) | ISM | 18 | A |
Power Dissipation at TA=25°C (a) Linear Derating Factor |
PD | 1.1 8.8 |
W mW/°C |
Power Dissipation at TA=25°C (b) Linear Derating Factor |
PD | 1.7 13.6 |
W mW/°C |
This new generation of high density MOSFETs ZXM62N02E6 from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.