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ZXGD3101T8

Features: • Turn-off propagation delay 15ns and turnoff time 20ns• Suitable for Discontinuous Mode (DCM), Critical Conduction Mode (CrCM) and Continuous mode(CCM) operation• Compliant with Energy Star V2.0 and European Code of Conduct V3• Low component count• Halogen ...

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SeekIC No. : 004552398 Detail

ZXGD3101T8: Features: • Turn-off propagation delay 15ns and turnoff time 20ns• Suitable for Discontinuous Mode (DCM), Critical Conduction Mode (CrCM) and Continuous mode(CCM) operation• Compli...

ZXGD3101T8 Data Sheet

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Part Number:
ZXGD3101T8
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Turn-off propagation delay 15ns and turnoff time 20ns
• Suitable for Discontinuous Mode (DCM), Critical Conduction Mode (CrCM) and Continuous mode(CCM) operation
• Compliant with Energy Star V2.0 and European Code of Conduct V3
• Low component count
• Halogen free
• 5-15V VCC range


Application

Flyback converters in:
• Adaptors
• LCD monitors
• Server PSU's
• Set top boxes


Pinout

Connection Diagram


Specifications

Parameter Symbol Limit Unit
Supply voltage1 VCC 15 V
Continuous Drain pin voltage1 VD -3 to180 V
GATEH and GATEL output Voltage1 VG -3 to VCC + 3 V
Driver peak source current ISOURCE 3 A
Driver peak sink current ISINK 3 A
Reference current IREF 25 mA
Bias voltage VBIAS VCC V
Bias current IBIAS 100 mA
Power dissipation at TA =25°C PD 500 mW
Operating junction temperature Tj -40 to +150
Storage temperature Tstg -50 to +150
NOTES:
1. All voltages are relative to GND pin


Description

The ZXGD3101 is intended to drive MOSFETS configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFET's Gate pin.

Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current flow. The detectors' output voltage is then proportional to the MOSFET Drain-Source reverse voltage drop and this is applied to the Gate via the driver. This action provides a rapid turn off as current decays.




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