ZXGD3001E6

Features: • 12V operating voltage range• 9 Amps peak output current• Fast switching emitter-follower configuration• 3ns propagation delay time• 11ns rise/fall time, 1000pF load• Low input current requirement• 4.2A(source)/2.2A(sink) output current from 10m...

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SeekIC No. : 004552393 Detail

ZXGD3001E6: Features: • 12V operating voltage range• 9 Amps peak output current• Fast switching emitter-follower configuration• 3ns propagation delay time• 11ns rise/fall time, 100...

floor Price/Ceiling Price

Part Number:
ZXGD3001E6
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/24

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Product Details

Description



Features:

• 12V operating voltage range
• 9 Amps peak output current
• Fast switching emitter-follower configuration
• 3ns propagation delay time
• 11ns rise/fall time, 1000pF load
• Low input current requirement
• 4.2A(source)/2.2A(sink) output current from 10mA input
• SOT23-6 package
• Separate source and sink outputs for independent control of rise and fall time
• Optimized pin-out to ease board layout and minimize trace inductance
• No Latch Up
• No shoot through
• Near - Zero quiescent and output leakage current





Application

• Synchronous switch-mode power supplies
• Secondary side synchronous rectification
• Plasma Display Panel power modules
• 1, 2 and 3-phase motor control circuits
• Audio switching amplifier power output stages





Pinout

  Connection Diagram




Specifications

Part Number ZXGD3001E6
VIN
Max (V)
12
VCC
Max (V)
12
Isource @ IIN = 10mA (A) 4.2
Isink
(A)
2.2
IsinkPK
MAX (A)
9
IIN
MAX (V)
1
Gate Driver Switching Times (typ) td(rise)
ns
1.3
Gate Driver Switching Times (typ) tr
ns
7.3
Gate Driver Switching Times (typ) td(fall)
ns
3
Gate Driver Switching Times (typ) tf
ns
11
@ Condition CL=1nF;RL=1?;
VCC=8V;VIN=6V;RS=25


Parameter Symbol Limits Unit
Supply Voltage VCC 12 V
Input Voltage VIN 12 V
Peak sink current(c) I(sink)PK 9 A
Source current @ IIN1 + IIN2 =10mA(a) I(source) 4.2 A
Sink current @ IIN1 + IIN2 =10mA(a) I(sink) 2.2 A
Input current(c) IIN1, IIN2 1 A
Power dissipation at TA =25°C(a)(b)
Linear derating factor
Pd 1.1
8.8
W
mW/
Junction Temperature Tj 150
Operating and storage temperature range Tstg -55~+150





Description

 

The ZXGD3001E6 is a high-speed non-inverting single MOSFET gate driver capable of driving up to 9A into a MOSFET or IGBT gate capacitive load from supply voltages up to 12V. With typical propagation delay times down to 3ns and rise/fall times down to 11ns this device ensures rapid switching of the power MOSFET or IGBT to minimize power losses and distortion in high current fast switching applications.

The ZXGD3001E6 is inherently rugged to latch-up and shoot-through, and its wide supply voltage range allows full enhancement to minimize on-losses of the power MOSFET or IGBT. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs, and the optimized pin-out SOT23-6 package with separate source and sink pins eases board layout, enabling reduced parasitic inductance and independent control of rise and fall slew rates.






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