Features: Octave Bandwidth Operation+17 dBm Output Power-35 dBc Fundamental Leakage+5.0V, 125mA Bias SupplySMD, 4x4 mm QFN PackageRoHS Compliant100% RF, DC and Output Power TestingSpecificationsSupply Voltage (Vcc) +6.0 VDCSupply Current (Id)200 mAInput Power (RF Pin) +10.0 dBmStorage Temperature ...
XX1002-QH: Features: Octave Bandwidth Operation+17 dBm Output Power-35 dBc Fundamental Leakage+5.0V, 125mA Bias SupplySMD, 4x4 mm QFN PackageRoHS Compliant100% RF, DC and Output Power TestingSpecificationsSupp...
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Supply Voltage (Vcc) +6.0 VDC
Supply Current (Id)200 mA
Input Power (RF Pin) +10.0 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table1
Junction Temperature (Tj) MTTF Table1
(1) Junction temperature affects a device's MTTF. It is recommended to keep junction temperature as low as possible for maximum life.
Mimix Broadband's 2.5-6.0/5.0-12.0 GHz SMD Active Doubler delivers + 17 dBm of output power. The device combines an active doubler with an output buffer amplifier that delivers constant power over a range of input powers. The XX1002-QH device has excellent rejection of the fundamental and harmonic products and requires a single positive bias supply. This XX1002-QH device uses Mimix Broadband's 2 um GaAs HBT device model technology to ensure high reliability and uniformity. The XX1002-QH device comes in a low-cost 4x4 mm QFN Surface Mount Plastic Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Point-to-Point Radio, Microwave, LMDS, SATCOM and VSAT applications.