XP151A11BOMR

The XP151A11BOMR is designed as one kind of N-Channel power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible,the IC can be efficiently set thereby saving energy.In order to counter static,a gate protect diode is built-in.The small SOT-23 package makes high density mounting possible.

Let me show you the features of the XP151A11BOMR:(1)low on-state resistance:Rds (on)=0.12(Vgs=10 V) and Rds(on)=0.17(Vgs=4.5V);(2)ultra high-speed switching;(3)operational voltage:4.5V;(4)gate protect diode built-in;(5)high density mounting:SOT-23;(6)N-Channel power MOS FET;(7)DMOS structure;(8)low on-state resistance:0.1(max);(9)ultra high-speed switching;(10)gate protect diode built-in.Also it can be used in notebook PCs,cellular and portable phones,on-board power supplies and Li-ion battery systems.

The absolute maximum ratings of the XP151A11BOMR can be summarized as:(1)drain-source voltage:30 V;(2)gate-source voltage:+/-20 V;(3)drain current(DC):1 A;(4)drain current (pulse):4 A;(5)reverse drain current:1 A;(6)continuous channel power dissipation (note):0.5 W;(7)channel temperature:150 ;(8)storage temperature:-55 to 150.If you want to know more information such as the electrical characteristics about the XP151A11B0MR,please download the datasheet in www.seekic.com .