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XP151A02BOMR

Features: ·Low on-state resistance: Rds(on)=0.2Ω(Vgs=4.5V) Rds(on)=0.32Ω(Vgs=2.5V)·Ultra high-speed switching·Operational Voltage: 2.5V·High density mounting: SOT-23Application· Notebook PCs· Cellular and portable phones· On-board power supplies· Li-ion battery systemsSpecifications ...

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XP151A02BOMR: Features: ·Low on-state resistance: Rds(on)=0.2Ω(Vgs=4.5V) Rds(on)=0.32Ω(Vgs=2.5V)·Ultra high-speed switching·Operational Voltage: 2.5V·High density mounting: SOT-23Application· Notebook...

XP151A02BOMR Data Sheet

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Part Number:
XP151A02BOMR
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

·Low on-state resistance: Rds(on)=0.2Ω(Vgs=4.5V)
                                         Rds(on)=0.32Ω(Vgs=2.5V)
·Ultra high-speed switching
·Operational Voltage: 2.5V
·High density mounting: SOT-23


Application

· Notebook PCs
· Cellular and portable phones
· On-board power supplies
· Li-ion battery systems


Specifications

PARAMETER SYMBOL RATINGS UNITS
Drain-Source Voltage Vdss 20 V
Gate-Source Voltage Vgss ±12 V
Drain Current (DC) Id 0.8 A
Drain Current (Pulse) Idp 2.5 A
Reverse Drain Current Idr 0.5 A
Continuous Channel
Power Dissipation (note)		 Pd 2.5 W
Channel Temperature Tch 150
Storage Temperature Tstg -55~150



Description

The XP151A02B0MR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package of XP151A02B0MR makes high density mounting possible.




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