Features: ·Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V : Rds (on) = 0.115Ω ( Vgs = -2.5V·Ultra high-speed switching·Operational Voltage : -2.5V·High density mounting : SOP-8Application·Notebook PCs·Cellular and portable phones·On-board power supplies·Li-ion battery system...
XP134A1275SR: Features: ·Low on-state resistance : Rds (on) = 0.075Ω ( Vgs = -4.5V : Rds (on) = 0.115Ω ( Vgs = -2.5V·Ultra high-speed switching·Operational Voltage : -2.5V·High density mounting : SOP-...
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Features: ·Low on-state resistance: Rds(on)=0.065Ω(Vgs=-10V) Rds(on)=0.11Ω(Vgs=-4.5V)·...
Features: ·Low on-state resistance (Nch) :Rds (on) = 0.033Ω ( Vgs = 10V ) Rds (on) = 0.045...
Features: ` Low On-State Resistance :Rds(on)=0.065(Vgs=-10V) :Rds(on)=0.11(Vgs=-4.5V)` Ultra High-...
PARAMETER | SYMBOL | RATINGS | UNITS |
Drain-Source Voltage | Vdss | -30 | V |
Gate-Source Voltage | Vgss | ±20 | V |
Drain Current (DC) | Id | -4.5 | A |
Drain Current (Pulse) | Idp | -18 | A |
Reverse Drain Current | Idr | -4.5 | A |
Continuous Channel Power Dissipation (note) |
Pd | 2 | W |
Channel Temperature | Tch | 150 | |
Storage Temperature | Tstg | -55~150 |
The XP134A1275SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the XP134A1275SR can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible.