XD010-51S-D4F

Note 1:
The internally generated gate voltage is thermally compensated to maintain constant quiescent current over the temperature range listed in the data sheet. No compensation is provided for gain changes with temperature. This can only be accomplished with AGC external to the module.
Note 2:
Internal RF decoupling is included on all bias leads. No additional
bypass elements are required, however some applications may require energy storage on the drain leads to accommodate time-varying waveforms.
Note 3:
This module was designed to have its leads hand soldered to an adjacent PCB. The maximum soldering iron tip temperature should not exceed 700, and the soldering iron tip should not be in direct contact with the lead for longer than 10 seconds. Refer to app note AN060 (www.sirenza.com) for further installation instructions.

Sirenza Microdevices' XD010-51S-D4F 15W power module is a robust 2- stage Class A/AB amplifier module is a driver stage in many 900 MHz applications. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit operates from a single voltage supply and has internal temperature compensation of the bias voltage to ensure stable performance over the full temperature range. It is a drop-in, no-tune solution for medium power applications requiring high efficiency, excellent linearity, and unit-to-unit repeatability. It is internally matched to 50 ohms.