XB1009-QT

Mimix Broadband's three stage 12.0-27.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 16.0 dB with a +22.0 dBm P1dB output compression point across much of the band. This XB1009-QT MMIC uses Mimix Broadband's 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 3x3mm QFN Surface Mount Package offering excellent RF and thermal properties. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

XB1009-QT has many features: 1.Excellent Transmit LO/Output Buffer Stage; 2.On-Chip ESD Protection; 3.16.0 dB Small Signal Gain; 4.+22.0 dBm P1dB Compression Point; 5.RoHS Compliant SMD, 3x3 mm QFN Package; 6.100% RF, DC, and Output Power Testing.

Here are some absolute maximum ratings of XB1009-QT: 1.Supply Voltage is +6.0 VDC; 2.Supply Current (Id1,2,3) is 90, 260 mA; 3.Gate Bias Voltage (Vg) is +0.3 VDC; 4.Input Power (Pin) is +12.0 dBm; 5.Storage Temperature (Tstg) is -65 to +165 ; 6.Operating Temperature (Ta) is -55 to MTTF Graph1; 7.Channel Temperature (Tch) is MTTF Graph1.

when Ta=25, electrical characterics of XB1009-QT: 1.Frequency Range is from 12.0 to 27.0 GHz; 2.Input Return Loss is 10.0dB; 3.Output Return Loss is 10.0dB; 4.Small Signal Gain is 16.0dB; 5.Reverse Isolation is 45.0dB; 6.Noise Figure is 5.0dB; 7.Output Power for 1dB Compression (P1dB) is 22.0dBm.