XB1006-BD

Features: High Dynamic Range/Positive Gain SlopeExcellent LO Driver/Buffer AmplifierLow Noise or Power Bias Configurations21.0 dB Small Signal Gain3.2 dB Noise Figure at Low Noise Bias+15 dBm P1dB Compression Point at Power Bias100% On-Wafer RF, DC and Noise Figure Testing100% Visual Inspection to...

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SeekIC No. : 004547622 Detail

XB1006-BD: Features: High Dynamic Range/Positive Gain SlopeExcellent LO Driver/Buffer AmplifierLow Noise or Power Bias Configurations21.0 dB Small Signal Gain3.2 dB Noise Figure at Low Noise Bias+15 dBm P1dB C...

floor Price/Ceiling Price

Part Number:
XB1006-BD
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

High Dynamic Range/Positive Gain Slope
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
3.2 dB Noise Figure at Low Noise Bias
+15 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010





Specifications

Supply Voltage (Vd) +6.0 VDC
Supply Current (Id) 120 mA
Gate Bias Voltage (Vg) +0.3 VDC
Input Power (Pin) +5 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table5
Channel Temperature (Tch) MTTF Table5
(5) Channel temperature affects a device's MTBF. It is recommended to keep channel temperature as low as possible for maximum life.




Description

Mimix Broadband's three stage 18.0-38.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a positive gain slope, and a noise figure of 3.2 dB across the band. This XB1006-BD MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XB1006-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wavePoint-to-Point Radio, LMDS, SATCOM and VSAT applications.






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