Features: High Dynamic Range/Positive Gain SlopeExcellent LO Driver/Buffer AmplifierLow Noise or Power Bias Configurations21.0 dB Small Signal Gain3.2 dB Noise Figure at Low Noise Bias+15 dBm P1dB Compression Point at Power Bias100% On-Wafer RF, DC and Noise Figure Testing100% Visual Inspection to...
XB1006-BD: Features: High Dynamic Range/Positive Gain SlopeExcellent LO Driver/Buffer AmplifierLow Noise or Power Bias Configurations21.0 dB Small Signal Gain3.2 dB Noise Figure at Low Noise Bias+15 dBm P1dB C...
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Supply Voltage (Vd) | +6.0 VDC |
Supply Current (Id) | 120 mA |
Gate Bias Voltage (Vg) | +0.3 VDC |
Input Power (Pin) | +5 dBm |
Storage Temperature (Tstg) | -65 to +165 |
Operating Temperature (Ta) | -55 to MTTF Table5 |
Channel Temperature (Tch) | MTTF Table5 |
Mimix Broadband's three stage 18.0-38.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 21.0 dB with a positive gain slope, and a noise figure of 3.2 dB across the band. This XB1006-BD MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The XB1006-BD chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wavePoint-to-Point Radio, LMDS, SATCOM and VSAT applications.