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WSF512K16-XXX

Features: ` Access Times of 35ns (SRAM) and 90ns (FLASH)` Access Times of 70ns (SRAM) and 120ns (FLASH)` Packaging -66 pin, PGA Type, 1.385 square HIP, Hermetic Ceramic HIP (Package 402) -68 lead, Hermetic CQFP (G2), 22mm (0.880 ) square (Package 500). Designed to fi t JEDEC 68 lead 0.990 CQFJ...

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SeekIC No. : 004546762 Detail

WSF512K16-XXX: Features: ` Access Times of 35ns (SRAM) and 90ns (FLASH)` Access Times of 70ns (SRAM) and 120ns (FLASH)` Packaging -66 pin, PGA Type, 1.385 square HIP, Hermetic Ceramic HIP (Package 402) -68 lead, ...

WSF512K16-XXX Data Sheet

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Part Number:
WSF512K16-XXX
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` Access Times of 35ns (SRAM) and 90ns (FLASH)
` Access Times of 70ns (SRAM) and 120ns (FLASH)
` Packaging
   - 66 pin, PGA Type, 1.385" square HIP, Hermetic Ceramic HIP (Package 402)
   -68 lead, Hermetic CQFP (G2), 22mm (0.880")
    square (Package 500). Designed to fi t JEDEC 68
    lead 0.990" CQFJ footprint (FIGURE 2)
` 512Kx16 SRAM
` 512Kx16 5V FLASH
` Organized as 512Kx16 of SRAM and 512Kx16 of Flash Memory with separate Data Busses
` Both blocks of memory are User Confi gurable as 1Mx8
` Low Power CMOS
` Commercial, Industrial and Military Temperature Ranges
` TTL Compatible Inputs and Outputs
` Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation
`Weight - 13 grams typical


Pinout

Connection Diagram


Specifications

Parameter Symbol Min Max Unit
Operating Temperature TA -55 +125  
Storage Temperature TSTG -65 +150  
Signal Voltage Relative to GND VG -0.5 7.0 V
Junction Temperature TJ   150  
Supply Voltage VCC -0.5 7.0 V
Parameter  
Flash Data Retention 20 years
Flash Endurance (write/erase cycles) 100,000

NOTES: 1. Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the maximum levels may degrade performance and affect reliability.




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