Features: Access Times of 60, 70, 90, 120, 150nsPackaging•66 pin, PGA Type, 1.075 square, Hermetic Ceramic HIP (Package 400(1))•68 lead, 40mm, Low Capacitance Hermetic CQFP(Package 501)•68 lead, 40mm, Low Profile 3.5mm (0.140 ), CQFP(Package 502)•68 lead, 22.4mm (0.880 ) L...
WF512K32-XXX5: Features: Access Times of 60, 70, 90, 120, 150nsPackaging•66 pin, PGA Type, 1.075 square, Hermetic Ceramic HIP (Package 400(1))•68 lead, 40mm, Low Capacitance Hermetic CQFP(Package 501)...
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DescriptionThe WF512K32N-120G1UC5A is designed as one kind of 512Kx32 5V flash module. Features of...
Features: · Access Times of 60, 70, 90, 120, 150ns· Packaging • 66 pin, PGA Type, 1.075 squ...
Access Times of 60, 70, 90, 120, 150ns
Packaging
•66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP (Package 400(1))
•68 lead, 40mm, Low Capacitance Hermetic CQFP(Package 501)
•68 lead, 40mm, Low Profile 3.5mm (0.140"), CQFP(Package 502)
•68 lead, 22.4mm (0.880") Low Profile CQFP (G2U), 3.5mm(0.140") high, (Package 510)
•68 lead, 23.9mm (0.940") Low Profile CQFP (G1U), 3.5mm(0.140") high, (Package 519)
100,000 Erase/Program Cycles Minimum
Sector Architecture
•8 equal size sectors of 64KBytes each
•Any combination of sectors can be concurrently erased.Also supports full chip erase
Organized as 512Kx32
Commercial, Industrial and Military Temperature Ranges
5 Volt Programming. 5V ± 10% Supply.
Low Power CMOS, 6.5mA Standby
Embedded Erase and Program Algorithms
TTL Compatible Inputs and CMOS Outputs
Built-in Decoupling Caps for Low Noise Operation
Page Program Operation and Internal Program Control Time
Weight
WF512K32-XG2UX5 - 8 grams typical
WF512K32-XH1X5 - 13 grams typical
WF512K32-XG4X5 - 20 grams typical
WF512K32-XG4TX5 - 20 grams typical
WF512K32-XG1UX5 - 5 grams typical
Parameter | Unit | |
Operating Temperature | -55 to +125 | °C |
Supply Voltage Range (VCC) | -2.0 to +7.0 | V |
Signal voltage range (any pin except A9) (2) | -2.0 to +7.0 | V |
Storage Temperature Range | -65 to +150 | °C |
Lead Temperature (soldering, 10 seconds) | +300 | °C |
Data Retention (Mil Temp) | 20 years | |
Endurance - write/erase cycles (Mil Temp) | 100,000 cycles min. | |
Voltage for sector protect (VID) (3) | -2.0 to +14.0 | V |