DescriptionThe WED9LC6816V1610BI is one member of the WED9LC6816V family which is designed as the 3.3 V, 256K x 32 synchronous pipeline SRAM that provides a total memory solution for the Texas instruments TMS320C6201 and the TMS320C6701 DSPs. This device is also available in clock speeds of 125 an...
WED9LC6816V1610BI: DescriptionThe WED9LC6816V1610BI is one member of the WED9LC6816V family which is designed as the 3.3 V, 256K x 32 synchronous pipeline SRAM that provides a total memory solution for the Texas instr...
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Features: ` Clock speeds:` SSRAM: 100 MHz` SDRAM: 100 MHz` 100% tested to timing requirements of L...
Features: Clock speeds:• SSRAM: 100 MHz• SDRAM: 100 MHz 100% tested to timing requirem...
Features: Clock speeds:SSRAM: 200, 166,150, and 133 MHz• SDRAMs: 125 and 100 MHzDSP Memory S...
The WED9LC6816V1610BI is one member of the WED9LC6816V family which is designed as the 3.3 V, 256K x 32 synchronous pipeline SRAM that provides a total memory solution for the Texas instruments TMS320C6201 and the TMS320C6701 DSPs. This device is also available in clock speeds of 125 and 100 MHz, allowing the user to develop a fast external memory for the SDRAM interface port.
Features of the WED9LC6816V1610BI are:(1)3.3 V operating supply voltage;(2)Direct control interface to both the SSRAM and SDRAM ports on the "C6x";(3)Common address and databus;(4)65% space savings vs. monolithic solution;(5)Reduced system inductance and capacitance.
The absolute maximum ratings of the WED9LC6816V1610BI can be summarized as:(1)Voltage on VCC Relative to VSS: -0.5 V to +4.6 V;(2)VIN (DQx): -0.5 V to Vcc +0.5 V;(3)Storage Temperature (BGA): -55°C to +125°C;(4)Junction Temperature: +150°C;(5)Short Circuit Output Current: 100 mA. If you want to know more information about it, please download the datasheet in www.seekic.com or www.chinaicmart.com .