WED2ZL361MV

· Fast clock speed: 166, 150, 133, and 100MHz
· Fast access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns
· Fast OE access times: 3.5ns, 3.8ns, 4.2ns, and 5.0ns
· Single +3.3V ± 5% power supply (VDD)
· Snooze Mode for reduced-standby power
· Individual Byte Write control
· Clock-controlled and registered addresses, data I/Os and control signals
· Burst control (interleaved or linear burst)
· Packaging:
    • 119-bump BGA package
· Low capacitive bus loading

The WEDC SyncBurst - SRAM family of the WED2ZL361MV employs high-speed, lowpower CMOS designs that are fabricated using an advanced CMOS process. WEDC's 32Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK). The NBL or No Bus Latency Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low." Asynchronous inputs of the WED2ZL361MV  include the sleep mode enable (ZZ). Output Enable controls the outputs at any given time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation and provides increased timing flexibility for incoming signals.