WED2DG472512V-D2

Features: · 4x512Kx72 Synchronous, Synchronous Burst· Pipeline Architecture; Single Cycle Deselect· Linear and Sequential Burst Support via MODE pin· Clock Controlled Registered Module Enable (EM)· Clock Controlled Registered Bank Enables (E1, E2, E3, E4)· Clock Controlled Byte Write Mode Enable (...

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WED2DG472512V-D2 Picture
SeekIC No. : 004545544 Detail

WED2DG472512V-D2: Features: · 4x512Kx72 Synchronous, Synchronous Burst· Pipeline Architecture; Single Cycle Deselect· Linear and Sequential Burst Support via MODE pin· Clock Controlled Registered Module Enable (EM)· ...

floor Price/Ceiling Price

Part Number:
WED2DG472512V-D2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· 4x512Kx72 Synchronous, Synchronous Burst
· Pipeline Architecture; Single Cycle Deselect
· Linear and Sequential Burst Support via MODE pin
· Clock Controlled Registered Module Enable (EM)
· Clock Controlled Registered Bank Enables (E1, E2, E3, E4)
· Clock Controlled Byte Write Mode Enable (BWE)
· Clock Controlled Byte Write Enables (BW1 - BW8)
· Clock Controlled Registered Address
· Clock Controlled Registered Global Write (GW)
· Asynchronous Output Enable (G)
· Internally Self-Timed Write
· Individual Bank Sleep Mode Enables (ZZ1, ZZ2, ZZ3, ZZ4)
· Gold Lead Finish
· 3.3V ± 10% Operation
· Frequency(s): 200, 166, 150, and 133MHz
· Access Speed(s): tKHQV = 3.0, 3.5, 3.7, and 4.0ns
· Common Data I/O
· High Capacitance (30pF) Drive, at Rated Access Speed
· Single Total Array Clock
· Multiple Vcc and Gnd for Improved Noise Immunity



Pinout

  Connection Diagram


Specifications

Voltage on Vcc Relative to Vss                  -0.3V to +4.6V
Vin                                                     -0.3V to Vcc +0.5V
Storage Temperature                        -55°C to + 125°C
Operating Temperature (Commercial)      0°C to +70°C
Operating Temperature (Industrial)        -40°C to +85°C
Short Circuit Output Current                                  100mA



Description

The WED2DG472512V-D2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The WED2DG472512V-D2 contains sixteeen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilayer FR4 Substrate. The Module Architecture is defined as a Sync/SyncBurst, Pipeline, with support for either linear or sequential burst. This Module provides high performance, 3-1-1-1 accesses when used in Burst Mode, and when used in
Synchronous Only Mode, provides a high performance, data access every second cycle.

Synchronous Only operations of WED2DG472512V-D2 are performed via strapping ADSC Low, and ADSP/ADV High, which provides for Ultra Fast Accesses in Read Mode while providing for internally self-timed Early Writes.

Synchronous/Synchronous Burst operations are in relation to an externally supplied clock, Registered Address, Registered Global Write, Registered Enables as well as an Asynchronous Output Enable. This Module has been defined with full flexibility, which allows individual control of each of the eight bytes, as well as Quad Words in both Read and Write Operations.




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