WED2ZL361MSJ

Features: · Fast clock speed: 250, 225, 200, 166, 150, 133MHz· Fast access times: 2.6, 2.8, 3.0, 3.5, 3.8, 4.2ns· Fast OE access times: 2.6, 2.8, 3.0, 3.5ns, 3.8ns, 4.2ns· Separate +2.5V ± 5% power supplies for core, I/O (VDD, VDDQ)· Snooze Mode for reduced-standby power· Individual Byte Write con...

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SeekIC No. : 004545551 Detail

WED2ZL361MSJ: Features: · Fast clock speed: 250, 225, 200, 166, 150, 133MHz· Fast access times: 2.6, 2.8, 3.0, 3.5, 3.8, 4.2ns· Fast OE access times: 2.6, 2.8, 3.0, 3.5ns, 3.8ns, 4.2ns· Separate +2.5V ± 5% power ...

floor Price/Ceiling Price

Part Number:
WED2ZL361MSJ
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/5

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Product Details

Description



Features:

· Fast clock speed: 250, 225, 200, 166, 150, 133MHz
· Fast access times: 2.6, 2.8, 3.0, 3.5, 3.8, 4.2ns
· Fast OE access times: 2.6, 2.8, 3.0, 3.5ns, 3.8ns, 4.2ns
· Separate +2.5V ± 5% power supplies for core, I/O (VDD, VDDQ)
· Snooze Mode for reduced-standby power
· Individual Byte Write control
· Clock-controlled and registered addresses, data I/Os and control signals
· Burst control (interleaved or linear burst)
· Packaging:
    •119-bump BGA package
    • JEDEC Pin Configuration
· Low capacitive bus loading



Specifications

Voltage on VDD Supply Relative to VSS        -0.3V to +3.6V
VIN (DQx)                                                   -0.3V to +3.6V
VIN (Inputs)                                                -0.3V to +3.6V
Storage Temperature (BGA)                  -55°C to +125°C
Short Circuit Output Current                                    100mA




Description

The WED2ZL361MSJ SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WED2ZL361MSJ's 36Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through registers controlled by a positive-edgetriggered single-clock input (CLK). The NBL or No Bus Latency Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low." Asynchronous inputs include the sleep mode enable (ZZ). Output Enable controls the outputs at any given time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation and provides increased timing flexibility for incoming signals.




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