Features: · Fast clock speed: 250, 225, 200, 166, 150, 133MHz· Fast access times: 2.6, 2.8, 3.0, 3.5, 3.8, 4.2ns· Fast OE access times: 2.6, 2.8, 3.0, 3.5ns, 3.8ns, 4.2ns· Separate +2.5V ± 5% power supplies for core, I/O (VDD, VDDQ)· Snooze Mode for reduced-standby power· Individual Byte Write con...
WED2ZL361MSJ: Features: · Fast clock speed: 250, 225, 200, 166, 150, 133MHz· Fast access times: 2.6, 2.8, 3.0, 3.5, 3.8, 4.2ns· Fast OE access times: 2.6, 2.8, 3.0, 3.5ns, 3.8ns, 4.2ns· Separate +2.5V ± 5% power ...
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Features: · 4x512Kx72 Synchronous, Synchronous Burst· Flow-Through Architecture· Linear and Sequen...
Features: · 4x512Kx72 Synchronous, Synchronous Burst· Pipeline Architecture; Single Cycle Deselect...
Features: · Fast clock speed: 200, 166, 150 & 133MHz· Fast access times: 2.5ns, 3.5ns, 3.8ns &...
The WED2ZL361MSJ SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an advanced CMOS process. WED2ZL361MSJ's 36Mb SyncBurst SRAMs integrate two 1M x 18 SRAMs into a single BGA package to provide 1M x 36 configuration. All synchronous inputs pass through registers controlled by a positive-edgetriggered single-clock input (CLK). The NBL or No Bus Latency Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low." Asynchronous inputs include the sleep mode enable (ZZ). Output Enable controls the outputs at any given time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation and provides increased timing flexibility for incoming signals.