WED2EG472512V-D2

*Stress greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions greater than those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

The WED2EG472512V-D2 is a Synchronous/Synchronous Burst SRAM, 84 position Dual Key; Double High DIMM (168 contacts) Module, organized as 4x512Kx72. The Module contains sixteeen (16) Synchronous Burst RAM devices, packaged in the industry standard JEDEC 14mmx20mm TQFP placed on a Multilayer FR4 Substrate. The Module Architecture is defined as a Sync/SyncBurst, Pipeline, with support for either linear or sequential burst. This Module provides high performance, 3-1-1-1 accesses when used in Burst Mode.

Synchronous Only operations of the WED2EG472512V-D2 are performed via strapping ADSC Low, and ADSP/ADV High, which provides for Ultra Fast Accesses in Read Mode while providing for internally self-timed Early Writes.

Synchronous/Synchronous Burst operations of the WED2EG472512V-D2 are in relation to an externally supplied clock, Registered Address, Registered Global Write, Registered Enables as well as an Asynchronous Output Enable. This Module has been defined with full flexibility, which allows individual control of each of the eight bytes, as well as Quad Words in both Read and Write Operations.