WE128K32

Features: · Access Times of 120*, 140, 150, 200, 250, 300ns· Packaging:• 66-pin, PGA Type, 27.3mm (1.075 ) square, Hermetic Ceramic HIP (Package 400)• 68 lead, 22.4mm sq. CQFP (G2T)1, 4.57mm (0.180 ) high, (Package 509)• 68 lead, 23.9mm sq. Low Profile CQFP (G1U), 3.57mm (0.140 )...

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WE128K32 Picture
SeekIC No. : 004545527 Detail

WE128K32: Features: · Access Times of 120*, 140, 150, 200, 250, 300ns· Packaging:• 66-pin, PGA Type, 27.3mm (1.075 ) square, Hermetic Ceramic HIP (Package 400)• 68 lead, 22.4mm sq. CQFP (G2T)1, 4....

floor Price/Ceiling Price

Part Number:
WE128K32
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

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Product Details

Description



Features:

· Access Times of 120*, 140, 150, 200, 250, 300ns
· Packaging:
• 66-pin, PGA Type, 27.3mm (1.075") square, Hermetic Ceramic HIP (Package 400)
• 68 lead, 22.4mm sq. CQFP (G2T)1, 4.57mm (0.180") high, (Package 509)
• 68 lead, 23.9mm sq. Low Profile CQFP (G1U), 3.57mm (0.140") high, (Package 519)
• 68 lead, 23.9mm sq. Low Profile CQFP (G1T), 4.06mm (0.160") high, (Package 524)
· Organized as 128Kx32; User Configurable as 256Kx16 or 512Kx8
· Write Endurance 10,000 Cycles
· Data Retention Ten Years Minimum (at +25°C)
· Commercial, Industrial and Military Temperature Ranges
· Low Power CMOS
· Automatic Page Write Operation
· Page Write Cycle Time: 10ms Max
· Data Polling for End of Write Detection
· Hardware and Software Data Protection
· TTL Compatible Inputs and Outputs
· 5 Volt Power Supply
· Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation
· Weight
WE128K32-XG2TX1 - 8 grams typical
WE128K32-XG1UX - 5 grams typical
WE128K32-XG1TX - 5 grams typical
WE128K32-XH1X - 13 grams typical



Pinout

  Connection Diagram


Specifications

Parameter
Symbol
Unit
Operating Temperature
TA
-55 to +125
V
Storage Temperature
TSTG
-65 to +150
V
Signal Voltage Relative to GND
VG
-0.6 to +6.25
°C
Voltage on OE and A9
-0.6 to +13.5
°C

NOTE:
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.




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