WCMS0808U1X

(Above which the useful life may be impaired. For user guidelines,
not tested.)
Storage Temperature ................................. −65 to +150
Ambient Temperature with
Power Applied................................................... 0 to +70
Supply Voltage to Ground Potential
(Pin 28 to Pin 14)...........................................−0.5V to +4.6V
DC Voltage Applied to Outputs
in High Z State^[1].................................. −0.5V to V_CC + 0.5V
DC Input Voltage^[1].............................. −0.5V to V_CC + 0.5V
Output Current into Outputs (LOW)........................... 20 mA
Static Discharge Voltage.......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current.................................................... >200 mA

The WCMS0808U1X is composed of a high-performance CMOS static RAM organized as 32K words by 8 bits. Easy  emory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state drivers. These devices have an automatic power-down feature, reducing the power consumption by over 99% when deselected. The WCMS0808U1X is available in the 450-mil-wide (300-mil body width) narrow SOIC and TSOP.

An active LOW WCMS0808U1X write enable signal (WE) controls the writing/ reading operation of the memory. When CE and WE inputs are both LOW, data on the eight data input/output pins (I/O₀ through I/O₇) is written into the memory location ddressed by the address present on the address pins (A₀ through A₁₄). Reading the WCMS0808U1X is accomplished by lecting the device and enabling the outputs, CE and OE active LOW, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.

The input/output pins of WCMS0808U1X remain in a high-impedance state unless the chip is selected, outputs are enabled, and write enable (WE) is HIGH.