WCMC8016V9X

static RAM organized as 512K words by 16 bits that supports an asynchronous memory interface. This device features advanced circuit design to provide ultra-low active current. The WCMC8016V9X is ideal for providing More Battery Life® (MoBL®) in portable applications such as cellular telephones. The device can be put into standby mode reducing power consumption by more than 99% when deselected using CE LOW, CE2 HIGH or both BHE and BLE are HIGH. The input/output pins (I/O₀ through I/O₁₅) of WCMC8016V9X are placed in a high-impedance state when: deselected (CE HIGH, CE2 LOW OE is deasserted HIGH), or during a write operation (Chip Enabled and Write Enable WE LOW). The WCMC8016V9X also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling even when the chip is selected (Chip Enable CE LOW, CE2 HIGH and both BHE and BLE are LOW). Reading from the device is accomplished by asserting the Chip Enables (CE LOW and CE2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O₀ to I/O₇. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O₈ to I/O₁₅. See the Truth Table for a complete description of read and write modes