Specifications Mfg Part Number: GC2016V5A Substrate Connection Req.: Ground Die Part Number: Wafer Diameter [mm]: 200.00 Die Technology: PowerChip 0.165 µm Die Size [µm]: 4010.74 x 1565.84 Metal I: 420 nm TiN/AlCu Step Size [µ...
WCMC2016V1X: Specifications Mfg Part Number: GC2016V5A Substrate Connection Req.: Ground Die Part Number: Wafer Diameter [mm]: 200.00 Die Technology: PowerChip 0.165 µm...
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Features: • 1T Cell, PSRAM Architecture• High speed: 70 ns• Wide Voltage range:-...
Features: • Wide voltage range: 2.70V3.30V• Access Time: 70ns• Ultra-low active ...
Mfg Part Number: |
GC2016V5A |
Substrate Connection Req.: |
Ground |
Die Part Number: |
|
Wafer Diameter [mm]: |
200.00 |
Die Technology: |
PowerChip 0.165 µm |
Die Size [µm]: |
4010.74 x 1565.84 |
Metal I: |
420 nm TiN/AlCu |
Step Size [µm]: |
4095.44 x 1650.89 |
Metal II: |
880 nm TiN/Ti/AlCu/TiN |
Scribe Size [µm]: |
84.70 x 84.94 |
Metal III: |
None |
Pad Count: |
64 |
Die Passivation: |
780nm P-Si3N4 + Polyimide |
Pad Size [µm]: |
73.6 x 73.6 |