W9825G6EH

Note 1: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.

W9825G6EH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words * 4 banks * 16 bits. W9825G6EH delivers a data bandwidth of up to 166M words per second (-6). To fully comply with the personal computer industrial standard, W9825G6EH is sorted into the following speed grades: -6/-6C and -75. The - 6 is compliant to the 166MHz/CL3 or 133MHz/CL2 specification. The 6C is compliant to the 166MHz/CL3 specification. The -75 is compliant to the 133MHz/CL3 specification.

Accesses to the W9825G6EH are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9825G6EH is ideal for main memory in high performance applications.