Features: · 3.3V ±0.3V Power Supply· Up to 143 MHz Clock Frequency· 4,194,304 Words ´ 4 Banks ´ 16 Bits Organization· Self Refresh Mode: Standard and Low Power· CAS Latency: 2 and 3· Burst Length: 1, 2, 4, 8, and Full Page· Burst Read, Single Writes Mode· Byte Data Controlled by LDQM, ...
W982516BH: Features: · 3.3V ±0.3V Power Supply· Up to 143 MHz Clock Frequency· 4,194,304 Words ´ 4 Banks ´ 16 Bits Organization· Self Refresh Mode: Standard and Low Power· CAS Latency: 2 and 3· Bur...
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ITEM | SYMBOL |
RATING |
UNIT |
NOTES |
Input, Output Voltage | VIN,VOUT |
-0.3~ Vcc +0.3 |
V |
1 |
Power Supply Voltage | VCC,VCCQ |
-0.3~4.6 |
V |
1 |
Operating Temperature(-5/-6/-7/- 7L) | TOPR |
0~70 |
°C |
1 |
Operating Temperature(6I) | TOPR |
-40 - 85 |
°C |
1 |
Storage Temperature | TSTG |
-55~150 |
°C |
1 |
Soldering Temperature(10s) | TSOLDER |
260 |
°C |
1 |
Power Dissipation | PD |
1 |
W |
1 |
Short Circuit Output Current | IOUT |
50 |
mA |
1 |
W982516BH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words *4 banks * 16 bits. Using pipelined architecture and 0.175 mm process technology, W982516BH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the personal computer industrial standard, W982516BH is sorted into two speed grades: -7 and -75. The - 7 is compliant to the 143 MHz/CL3 or PC133/CL2 specification, the -75 is compliant to the PC133/CL3 specification, for handheld device application, we also provide a low power option, the 75L grade, with Self Refresh Current under 1mA., and an industrial temperature option, the grade of 75I, which is guranteed to support -40°C 85°C.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read of W982516BH is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W982516BH is ideal for main memory in high performance applications.