Features: 1Mx32 and 2x1Mx32 DensitiesBased on AMD AM29LV160DT Flash DeviceSTs M29W160ET (optional)Fast Read Access Time 70ns3.3V Only ReprogrammingFlexible, Sector Architecture• One 16Kbyte, two 8Kbyte, one 32Kbyte andthirty-one 64Kbyte sectors.• Any combination of sectors can be era...
W7G1M32SV: Features: 1Mx32 and 2x1Mx32 DensitiesBased on AMD AM29LV160DT Flash DeviceSTs M29W160ET (optional)Fast Read Access Time 70ns3.3V Only ReprogrammingFlexible, Sector Architecture• One 16Kbyte,...
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Features: • 1Mx32 and 2x1Mx32 Densities• Based on AMD AM29LV160DT Flash Device•...
Features: • 1Mx32 and 2x1Mx32 Densities• Based on AMD AM29LV160DT Flash Device•...
Features: • 1Mx32 and 2x1Mx32 Densities• Based on AMD AM29LV160DT Flash Device•...
Storage Temperature
Plastic Packages .................................65°C to +150°C
Ambient Temperature
with Power Applied .............................65°C to +125°C
Voltage with Respect to Ground
VCC (Note 1) .......................................... 0.5 V to +4.0 V
A9, OE#, and RESET# (Note 2) ............ 0.5 V to +12.5 V
All other pins (Note 1) ..................... 0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3) ...................200 mA
Notes:
1. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to 2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC voltage on input or I/O pins is VCC +0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC +2.0 V for periods up to 20 ns. See Figure 8.
2. Minimum DC input voltage on pins A9, OE#, and RESET# is -0.5 V. During voltage transitions, A9, OE#, and RESET# may overshoot VSS to 2.0 V for periods of up to 20 ns. See Figure 7. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to 14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions
for extended periods may affect device reliability.
The W7G1M32SVx-BN and W7G21M32SVx-BN are or ga nized as one and two banks of 1Mx32 re spec tive ly. The modules are based on AMDs AM29LV160DT - 1Mx16 or STs M29W160ET (optional) Flash device in TSOP packages which are mount ed on an FR4 sub strate. Both modules offer access times between 70 and 120ns allowing for operation of high-speed mi cro pro ces sors without wait states.