Features: · Single 3.3 -volt operations: - 3.3 -volt Read - 3.3 -volt Erase - 3.3 -volt Program· Fast program operation: - Byte -by -byte programming: 50 mS (typ.)· Fast erase operation: 150 mS (typ.)· Fast read access time: Tkq 11 nS· Endurance: 10K cycles (typ.)· Twenty -year data retention· Har...
W49V002FA: Features: · Single 3.3 -volt operations: - 3.3 -volt Read - 3.3 -volt Erase - 3.3 -volt Program· Fast program operation: - Byte -by -byte programming: 50 mS (typ.)· Fast erase operation: 150 mS (typ...
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PARAMETER | RATING | UNIT |
Power Supply Voltage to Vss Potential | -0.5 to +4.6 | V |
Operating Temperature | 0 to +70 | °C |
Storage Temperature | -65 to +150 | °C |
D.C. Voltage on Any Pin to Ground Potential Except A9 | -0.5 to VDD +0.5 | V |
Transient Voltage (<20 nS ) on Any Pin to GrounPotential | -1.0 to VDD +0.5 | V |
The W49V002FA is a 2-megabit, 3.3-volt only CMOS flash memory organized as 256K ´ 8 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49V002FA results in fast program/erase operations with extremely low current consumption. This device can operate at two modes, Programmer bus interface mode and FWH bus interface mode. As in the Programmer interface mode, it acts like the traditional flash but with a multiplexed address inputs. But in the FWH interface mode, this device complies with the Intel FWH specification. The device can also be programmed and erased using standard EPROM programmers.