Features: · Single 3.3-volt operations: - 3.3-volt Read/Erase/Program· Fast Program operation: - Word-by-Word programming: 50 mS (max.)· Fast Erase operation: 100 mS (typ.)· Fast Read access time: 70/90 nS· Endurance: 10K cycles (typ.)· Ten-year data retention· Hardware data protection· Sector con...
W49L201: Features: · Single 3.3-volt operations: - 3.3-volt Read/Erase/Program· Fast Program operation: - Word-by-Word programming: 50 mS (max.)· Fast Erase operation: 100 mS (typ.)· Fast Read access time: 7...
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PARAMETER | RATING | UNIT |
Power Supply Voltage to Vss Potential | -0.5 to +7.0 | V |
Operating Temperature | 0 to +70 | °C |
Storage Temperature | -65 to +150 | °C |
D.C. Voltage on Any Pin to Ground Potential Except A9 | -0.5 to VDD +1.0 | V |
Transient Voltage (<20 nS ) on Any Pin to Ground Potential | -1.0 to VDD +1.0 | V |
Voltage on A9 Pin to Ground Potential | -0.5 to 12.5 | V |
The W49L201 is a 2-megabit, 3.3-volt only CMOS flash memory organized as 128K ´ 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L201 results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.