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W49L102

Features: · Single 3.3-volt operations: - 3.3-volt Read - 3.3-volt Erase - 3.3-volt Program· Fast Program operation: - Word-by-Word programming: 50 mS (max.)· Fast Erase operation: 100 mS (typ.)· Fast Read access time: 55/70/90 nS· Endurance: 1K/10K cycles (typ.)· Twenty-year data retention· Hardw...

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SeekIC No. : 004544768 Detail

W49L102: Features: · Single 3.3-volt operations: - 3.3-volt Read - 3.3-volt Erase - 3.3-volt Program· Fast Program operation: - Word-by-Word programming: 50 mS (max.)· Fast Erase operation: 100 mS (typ.)· Fa...

W49L102 Data Sheet

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Part Number:
W49L102
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Single 3.3-volt operations:
   - 3.3-volt Read
   - 3.3-volt Erase
   - 3.3-volt Program
· Fast Program operation:
   - Word-by-Word programming: 50 mS (max.)
· Fast Erase operation: 100 mS (typ.)
· Fast Read access time: 55/70/90 nS
· Endurance: 1K/10K cycles (typ.)
· Twenty-year data retention
· Hardware data protection
· 8K word Boot Block with Lockout protection
· Low power consumption
   - Active current: 15 mA (typ.)
   - Standby current: 10 mA (typ.)
· Automatic program and erase timing with internal VPP generation
· End of program or erase detection
   - Toggle bit
   - Data polling
· Latched address and data
· TTL compatible I/O
· JEDEC standard word-wide pinouts
· Available packages: 40-pin TSOP and 44-pin PLCC


Pinout

Connection Diagram


Specifications

PARAMETER RATING UNIT
Power Supply Voltage to Vss Potential -0.5 to +7.0 V
Operating Temperature 0 to +70 °C
Storage Temperature -65 to +150 °C
D.C. Voltage on Any Pin to Ground Potential Except A9 -0.5 to VDD +1.0 V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential -1.0 to VDD +1.0 V
Voltage on A9 Pin to Ground Potential -0.5 to 12.5 V



Description

The W49L102 is a 1-megabit, 3.3-volt only CMOS flash memory organized as 64K ´ 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W49L102 results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.




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