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W3EG6433S-JD3

Features: DDR266 and DDR333 Double-data-rate architecture Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2.5 (clock) Programmable Burst Length (2,4,8) Programmable Burst type (sequential & interleave) Edge aligned data output, center ali...

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SeekIC No. : 004544706 Detail

W3EG6433S-JD3: Features: DDR266 and DDR333 Double-data-rate architecture Bi-directional data strobes (DQS) Differential clock inputs (CK & CK#) Programmable Read Latency 2,2.5 (clock) Programmable Burst Lengt...

W3EG6433S-JD3 Data Sheet

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Part Number:
W3EG6433S-JD3
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

DDR266 and DDR333
Double-data-rate architecture
Bi-directional data strobes (DQS)
Differential clock inputs (CK & CK#)
Programmable Read Latency 2,2.5 (clock)
Programmable Burst Length (2,4,8)
Programmable Burst type (sequential & interleave)
Edge aligned data output, center aligned data input.
Auto and self refresh
Serial presence detect
Dual Rank
Power supply: 2.5V ± 0.2V
JEDEC 184 pin DIMM package
• JD3 PCB height: 30.48 (1.20")


Specifications

Parameter Symbol Value Units
Voltage on any pin relative to VSS

Voltage on VCC supply relative to VSS

Storage Temperature		 VIN, VOUT

VCC, VCCQ

TSTG		 -0.5 to 3.6

-1.0 to 3.6

-55 to +150		 V

V

Power Dissipation

Short Circuit Current		 PD

IOS		 24

50		 W

mA


Note: Permanent device damage may occur if 'ABSOLUTE MAXIMUM RATINGS' are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability




Description

The W3EG6433S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM component. The module consists of sixteen 16Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin FR4 substrate.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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