Features: · Clock speeds of 100MHz and 133MHz· Double-data-rate architecture· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2,5 (clock)· Programmable Burst Length (2,4,8)· Programmable Burst type (sequential & interleave)· Edge aligned...
W3EG64129S-D3: Features: · Clock speeds of 100MHz and 133MHz· Double-data-rate architecture· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2,5 (clock)· Pr...
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Features: • Double-data-rate architecture• DDR200, DDR266, DDR333 and DDR400• JE...
Features: • Double-data-rate architecture• DDR200, DDR266, DDR333 and DDR400• JE...
Features: • Double-data-rate architecture• DDR200, DDR266, DDR333 and DDR400• JE...
· Clock speeds of 100MHz and 133MHz
· Double-data-rate architecture
· Bi-directional data strobes (DQS)
· Differential clock inputs (CK & CK#)
· Programmable Read Latency 2,2,5 (clock)
· Programmable Burst Length (2,4,8)
· Programmable Burst type (sequential & interleave)
· Edge aligned data output, center aligned data input
· Auto and self refresh
· Serial presence detect
· Power Supply: 2.5V ± 0.20V
· JEDEC standard 184 pin DIMM package
Parameter | Symbol | Value | Units |
Voltage on any pin relative to VSS | VIN, VOUT | -0.5 to 3.6 | V |
Voltage on VCC supply relative to VSS | VCC, VCCQ | -1.0 to 3.6 | V |
Storage Temperature | TSTG | -55 to +150 | |
Power Dissipation | PD | 16 | W |
Short Circuit Current | IOS | 50 | mA |
The W3EG64129S-D3 is a 124Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The W3EG64129S-D3 consists of sixteen 128Mx4 DDR SDRAMs in 66 pin TSOP package mounted on a 184 Pin FR4 substrate.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.