W3EG64129S-D3

Features: · Clock speeds of 100MHz and 133MHz· Double-data-rate architecture· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2,5 (clock)· Programmable Burst Length (2,4,8)· Programmable Burst type (sequential & interleave)· Edge aligned...

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SeekIC No. : 004544698 Detail

W3EG64129S-D3: Features: · Clock speeds of 100MHz and 133MHz· Double-data-rate architecture· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2,5 (clock)· Pr...

floor Price/Ceiling Price

Part Number:
W3EG64129S-D3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Description



Features:

· Clock speeds of 100MHz and 133MHz
· Double-data-rate architecture
· Bi-directional data strobes (DQS)
· Differential clock inputs (CK & CK#)
· Programmable Read Latency 2,2,5 (clock)
· Programmable Burst Length (2,4,8)
· Programmable Burst type (sequential & interleave)
· Edge aligned data output, center aligned data input
· Auto and self refresh
· Serial presence detect
· Power Supply: 2.5V ± 0.20V
· JEDEC standard 184 pin DIMM package




Specifications

Parameter Symbol Value Units
Voltage on any pin relative to VSS VIN, VOUT -0.5 to 3.6 V
Voltage on VCC supply relative to VSS VCC, VCCQ -1.0 to 3.6 V
Storage Temperature TSTG -55 to +150
Power Dissipation PD 16 W
Short Circuit Current IOS 50 mA
Note:
Permanent device damage may occur if 'ABSOLUTE MAXIMUM RATINGS' are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability



Description

The W3EG64129S-D3 is a 124Mx64 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The W3EG64129S-D3 consists of sixteen 128Mx4 DDR SDRAMs in 66 pin TSOP package mounted on a 184 Pin FR4 substrate.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.




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