Features: • Low Voltage Operation− VDD = VPP = 2.7V to 3.6V Single Voltage• User-Configurable * 8 or * 16 Operation• High-Performance Read Access Time− 90 nS (VDD = 2.7V to 3.6V)• Operating Temperature− 0° C to +70° C (W28J160BT/TT90C)− -40° C to +85...
W28J160B: Features: • Low Voltage Operation− VDD = VPP = 2.7V to 3.6V Single Voltage• User-Configurable * 8 or * 16 Operation• High-Performance Read Access Time− 90 nS (VDD = 2.7...
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The W28J160B/T Flash memory chip is a high-density, cost-effective, nonvolatile, read/write storage device suited for a wide range of applications. It operates of VDD = 2.7V to 3.6V, with VPP of 2.7V to 3.6V or 11.7V to 12.3V. This low voltage operation capability enbales use in low power applications. The IC features a boot, parameter and main-blocked architecture, as well as low voltage and extended cycling. These features provide a highly flexible device suitable for portable terminals and personal computers. Additionally, the enhanced suspend capabilities provide an ideal solution for both code and data storage applications. For secure code storage applications, such as networking where code is either directly executed out of flash or downloaded to DRAM, the device offers four levels of protection. These are: absolute protection, enabled when VPP VPPLK; selective hardware blocking; flexible software blocking; or write protection. These alternatives give designers comprehensive control over their code security needs. The device is manufactured using 0.25 m process technology. It comes in industry-standard packaging, a 48-lead TSOP, which makes it ideal for small real estate applications.