W28J800T

Features: • Low Voltage Operation− VDD = VPP = 2.7V to 3.6V Single Voltage• OTP (One Time Program) Block− 3963 word + 4 word Program only array• User-Configurable x 8 or x 16 Operation• High-Performance Read Access Time− 90 nS (VDD = 2.7V to 3.6V)• O...

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SeekIC No. : 004544573 Detail

W28J800T: Features: • Low Voltage Operation− VDD = VPP = 2.7V to 3.6V Single Voltage• OTP (One Time Program) Block− 3963 word + 4 word Program only array• User-Configurable x 8 o...

floor Price/Ceiling Price

Part Number:
W28J800T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Low Voltage Operation
− VDD = VPP = 2.7V to 3.6V Single Voltage
• OTP (One Time Program) Block
− 3963 word + 4 word Program only array
• User-Configurable x 8 or x 16 Operation
• High-Performance Read Access Time
− 90 nS (VDD = 2.7V to 3.6V)
• Operating Temperature
− 0° C to +70° C (W28J800BT/TT90C)
− -40° C to +85° C (W28J800BT/TT90L)
• Low Power Management
− 2 A (VDD = 3.0V) Typical Standby Current
− Automatic Power Savings Mode Decreases ICCR in Static Mode
− 120 A (VDD = 3.0V, TA =+25° C, f = 32 KHz) Typical Read Current
• Optimized Array Blocking Architecture
− Two 4k-word (8k-byte) Boot Blocks
− Six 4k-word (8k-byte) Parameter Blocks
− Fifteen 32k-word (64k-byte) Main Blocks
− Top or Bottom Boot Location
• CMOS Process (P-type silicon substrate)
• Extended Cycling Capability
− Minimum 100,000 Block Erase Cycles
• Enhanced Automated Suspend Options
− Word/Byte Write Suspend to Read
− Block Erase Suspend to Word/Byte Write
− Block Erase Suspend to Read
• Enhanced Data Protection Features
− Absolute Protection with VPP VPPLK
− Block Erase, Full Chip Erase, Word/Byte Write and Lock-Bit Configuration Lockout during Power Transitions
− Block Locking with Command and #WP
− Permanent Locking
• Automated Block Erase, Full Chip Erase, Low Power Management Word/Byte Write and Lock-Bit Configuration
− Command User Interface (CUI)
− Status Register (SR)
• SRAM-Compatible Write Interface
• Industry-Standard Packaging
− 48-Lead TSOP
• Nonvolatile Flash Technology
• Not designed or rated as radiation hardened



Pinout

  Connection Diagram


Description

The W28J800B/T Flash memory chip is a high-density, cost-effective, nonvolatile, read/write storage W28J800T suited for a wide range of applications. It operates off of VDD = 2.7V to 3.6V, with VPP of 2.7V to 3.6V or 11.7V to 12.3V. This low voltage operation capability enbales use in low power applications. The IC W28J800T features a boot, parameter and main-blocked architecture, as well as low voltage and extended cycling. These  W28J800T features provide a highly flexible device suitable for portable terminals and personal computers. Additionally, the enhanced suspend capabilities provide an ideal solution for both code and data storage applications. For secure code storage applications, such as networking where code is either directly executed out of flash or downloaded to DRAM, the device offers four levels of protection. These are: absolute protection, enabled when VPP VPPLK; selective hardware blocking; flexible software blocking; or write protection. These alternatives give designers comprehensive control over their code security needs. The device is manufactured using 0.25 m process technology. W28J800T comes in industry-standard packaging, a 48-lead TSOP, which makes it ideal for small real estate applications.




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