Features: · High speed access time: 90/120 nS (max.)· Read operating current: 10 mA (max.)· Erase/Programming operating current: 30 mA (max.)· Standby current: 20 mA (max.)· Low voltage power supply range, 3.0V to 3.6V· +14V erase/+12V programming voltage· Fully static operation· All inputs and ou...
W27L010: Features: · High speed access time: 90/120 nS (max.)· Read operating current: 10 mA (max.)· Erase/Programming operating current: 30 mA (max.)· Standby current: 20 mA (max.)· Low voltage power supply...
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DescriptionThe W27L010-12 is a high speed,low power consumption electrically erasable and programm...
PARAMETER | RATING | UNIT |
Operation Temperature | 0 to +70 | °C |
Storage Temperature | -65 to +150 | °C |
Voltage on all Pins with Respect to Ground Except OE/VPP, A9 and VCC Pins |
-0.5 to VCC +0.5 | V |
Voltage on OE/VPP Pin with Respect to Ground | -0.5 to +14.5 | V |
Voltage on A9 Pin with Respect to Ground | -0.5 to +14.5 | V |
Voltage VCC Pin with Respect to Ground | -0.5 to +7 | V |
The W27L010 is a high speed, low power consumption Electrically Erasable and Programmable Read Only Memory organized as 131072 ´ 8 bits. It requires only one supply in the range of 3.0V to 3.6V in normal read mode. The W27L010 provides an electrical chip erase function.