Features: • Single power supply voltage: 3.3V ±10%• High speed access time: 70/90 nS (max.)• Read operating current: 15 mA (max.)• Erase/Programming operating current: 30 mA (max.)• Standby current: 20 A (max.)• +12V erase/programming voltage• Fully static...
W27L01: Features: • Single power supply voltage: 3.3V ±10%• High speed access time: 70/90 nS (max.)• Read operating current: 15 mA (max.)• Erase/Programming operating current: 30 mA ...
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DescriptionThe W27L010-12 is a high speed,low power consumption electrically erasable and programm...
• Single power supply voltage: 3.3V ±10%
• High speed access time: 70/90 nS (max.)
• Read operating current: 15 mA (max.)
• Erase/Programming operating current: 30 mA (max.)
• Standby current: 20 A (max.)
• +12V erase/programming voltage
• Fully static operation
• All inputs and outputs directly TTL/CMOS compatible
• Three-state outputs
• Available packages: 32-lead PLCC, 32-lead STSOP and 32-lead TSOP.
PARAMETER | RATING | UNIT |
Operation Temperature | 0 to +70 | °C |
Storage Temperature | -65 to +150 | °C |
Voltage on all Pins with Respect to Ground Except VDD, VPP and A9 Pins | -0.5 to VDD +0.5 | V |
Voltage on VDD Pin with Respect to Ground | -0.5 to +7 | V |
Voltage on VPP Pin with Respect to Ground | -0.5 to +14.5 | V |
Voltage on A9 Pin with Respect to Ground | -0.5 to +14.5 | V |
The W27L01 is a high speed, low power consumption Electrically Erasable and Programmable Read Only Memory organized as 131,072 × 8 bits. It requires only one supply in the range of 3.3V ± 10% in normal read mode. The W27L01 provides an electrical chip erase function.