Features: · High speed access time: 70/90 nS (max.)· Read operating current: 20 mA (max.)· Erase/Programming operating current 30 mA (max.)· Standby current: 100 mA (max.)· Unregulated battery power supply range, 4.5V to 5.5V· +13V erase and programming voltage· High Reliability CMOS Technology - ...
W27E520: Features: · High speed access time: 70/90 nS (max.)· Read operating current: 20 mA (max.)· Erase/Programming operating current 30 mA (max.)· Standby current: 100 mA (max.)· Unregulated battery power...
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PARAMETER | RATING | UNIT |
Ambient Temperature with Power Applied | -55 to +125 | °C |
Storage Temperature | -65 to +150 | °C |
Voltage on all Pins with Respect to Ground Except OE/VPP, A9 and VCC Pins |
-2.0 to +7.0 | V |
Voltage on OE/VPP Pin with Respect to Ground | -2.0 to +7.0 | V |
Voltage on A9 Pin with Respect to Ground | -2.0 to +7.0 | V |
Voltage VCC Pin with Respect to Ground | -2.0 to +14.0 | V |
The W27E520 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 65,536 ´ 8 bits. It includes latches for the lower 8 address lines to multiplex with the 8 data lines. To cooperate with the MCU, this device could save the external TTL component, also cost and space. It requires only one supply in the range of 4.5V to 5.5V in normal read mode. The W27E520 provides an electrical chip erase function. It will be a great convenient when you need to change/update the contents in the device.