Features: · High speed access time: 90/120 nS (max.)· Read operating current: 15 mA (typ.)· Erase/Programming operating current 15 mA (typ.)· Standby current: 5 mA (typ.)· Single 5V power supply· +14V erase/+12V programming voltage· Fully static operation· All inputs and outputs directly TTL/CMOS ...
W27E040: Features: · High speed access time: 90/120 nS (max.)· Read operating current: 15 mA (typ.)· Erase/Programming operating current 15 mA (typ.)· Standby current: 5 mA (typ.)· Single 5V power supply· +1...
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PARAMETER | RATING | UNIT |
Ambient Temperature with Power Applied | -55 to +125 | °C |
Storage Temperature | -65 to +150 | °C |
Voltage on all Pins with Respect to Ground Except VPP, A9 and VCC Pins |
-0.5 to VCC +0.5 | V |
Voltage on VPP Pin with Respect to Ground | -0.5 to +14.5 | V |
Voltage on A9 Pin with Respect to Ground | -0.5 to +14.5 | V |
Voltage VCC Pin with Respect to Ground | -0.5 to +7 | V |
The W27E040 is a high speed, low power Electrically Erasable and Programmable Read Only Memory organized as 524288 ´ 8 bits that operates on a single 5 volt power supply. The W27E040 provides an electrical chip erase function.