W26010A

Features: · High speed access time: 15/20/25 nS (max.)· Low power consumption: - Active: 1.3W (max.)· Single +5V power supply· Fully static operation - No clock or refreshing· All inputs and outputs directly TTL compatible· Three-state outputs· Data byte control - #LB (I/O1-I/O8), #UB (I/O9-I/O16)...

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W26010A Picture
SeekIC No. : 004544534 Detail

W26010A: Features: · High speed access time: 15/20/25 nS (max.)· Low power consumption: - Active: 1.3W (max.)· Single +5V power supply· Fully static operation - No clock or refreshing· All inputs and outputs...

floor Price/Ceiling Price

Part Number:
W26010A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

· High speed access time: 15/20/25 nS (max.)
· Low power consumption: - Active: 1.3W (max.)
· Single +5V power supply
· Fully static operation - No clock or refreshing
· All inputs and outputs directly TTL compatible
· Three-state outputs
· Data byte control - #LB (I/O1-I/O8), #UB (I/O9-I/O16)
· Available packages: 44-pin 400 mil SOJ and Type II TSOP



Pinout

  Connection Diagram


Specifications

PARAMETER RATING UNIT
Supply Voltage to Vss Potential -0.5 to +7.0 V
Input/Output to Vss Potential -0.5 to VDD +0.5 V
Allowable Power Dissipation 1.5 W
Storage Temperature -65 to +150 °C
Operating Temperature   0 to +70 °C
I -40 to85 °C



Description

The W26010A is a high-speed, low-power CMOS static RAM organized as 65,536 ´ 16 bits that operates on a single 5-volt power supply. This device is manufactured using Winbond's high performance CMOS technology.

The W26010A has an active low chip select, separate upper and lower byte selects, and a fast output enable. No clock or refreshing is required. Separate byte select controls (#LB and #UB) allow individual bytes to be written and read. #LB controls I/O1-I/O8, the lower byte. #UB controls I/O9-I/O16, the upper byte. This device is well suited for use in high-density, high-speed system applications.




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