W25P80

Features: • 8M / 16M / 32M-bit Serial Flash Memories• Family of Serial Flash MemoriesW25P80: 8M-bit/1M-byte (1,048,576) W25P16: 16M-bit/2M-byte (2,097,152) 256-bytes per programmable page Compatible 1M/2M/4M-bit devices• 4-pin SPI Serial Interface Clock, Chip Select, Data In, Dat...

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W25P80 Picture
SeekIC No. : 004544526 Detail

W25P80: Features: • 8M / 16M / 32M-bit Serial Flash Memories• Family of Serial Flash MemoriesW25P80: 8M-bit/1M-byte (1,048,576) W25P16: 16M-bit/2M-byte (2,097,152) 256-bytes per programmable pag...

floor Price/Ceiling Price

Part Number:
W25P80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

• 8M / 16M / 32M-bit Serial Flash Memories
• Family of Serial Flash Memories
   W25P80: 8M-bit/1M-byte (1,048,576)
   W25P16: 16M-bit/2M-byte (2,097,152)
   256-bytes per programmable page
   Compatible 1M/2M/4M-bit devices
• 4-pin SPI Serial Interface
   Clock, Chip Select, Data In, Data Out
   Easily interfaces to popular microcontrollers
   Compatible with SPI Modes 0 and 3
   Optional Hold function for SPI flexibility
• Low Power Consumption, Wide emperature Range
   Single 2.7 to 3.6V supply
   4mA active current, 1µA Power-down (typ)
   -40° to +85°C operating range
• Fast and Flexible Serial Data Access
   Clock operation to 50MHz
   Auto-increment Read capability
   Manufacturer and device type ID
• Programming Features
   Page program up to 256 bytes in 3.5ms
   Sector Erase (64K-byte) 0.6 seconds
   100,000 erase/write cycles
   Twenty-year data retention
• Software and Hardware Write Protection
   Write-Protect all or portion of memory
   Enable/Disable protection with /WP pin
• Parameter Page
   256 Byte page for ID# revision# or onfiguration data
  Separate from array, erase time <200ms
• Space Saving Packaging
   8-pin SOIC (W25P80 and W25P16)
   16-pin SOIC (W25P16)
• Ideal for systems with limited pins, space,  and power
   Controller-based serial code-download
  µC systems storing data, text or voice
   Battery-operated and portable products



Pinout

  Connection Diagram


Specifications

PARAMETERS SYMBOL CONDITIONS RANGE UNIT
Supply Voltage VCC   0.6 to +4.0 V
Voltage Applied to Any Pin VIO Relative to Ground 0.6 to VCC +0.4 V
Storage Temperature TSTG   65 to +150 °C
Lead Temperature TLEAD   See Note 2 °C
Electrostatic Discharge Voltage VESD Human Body Mode(3) 2000 to +2000 V



Description

The W25P80 (8M-bit) and W25P16 (16M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with current consumption as low as 4mA active and 1µA for power-down. Devices are offered in space-saving SOIC packages. As part of a family of Serial Flash products, Winbond also offers compatible devices in 1M/2M/4M-bit densities.

The W25P80/16 array is organized into 4,096/8,192 programmable pages of 256-bytes each. Up to 56 bytes can be programmed at a time using the Page Program instruction. Pages are grouped into 16/32 erasable sectors of 256 pages (64K-byte) each as shown in figure 2. Both Sector Erase and Chip (full chip) Erase instructions are supported. Additionally, a 256-byte Parameter Page is provided for user data that is typically stored in EEPROMs such as ID or revision numbers and configuration parameters. The parameter page is separate from the main array allowing for much faster erase times.

The Serial Peripheral Interface (SPI) consists of four pins (Serial Clock, Chip Select, Serial Data In and Serial Data Out) that support high speed serial data transfers up to 50MHz. A Hold pin, Write Protect pin and programmable write protect features provide further control flexibility. Additionally, the device can be queried for manufacturer and device type.

The Winbond W25P80/16 are fully compatible with the previous NexFlash NX25P80/16 Serial Flash memories.




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