Features: Performance• 2.7~3.6-volt write (program and erase) operations• Fast write operation• Read access time: 70, 90 nS• Typical program/erase cycles: − 100K• Twenty-year data retention• Ultra low power consumption Architecture• Dual Bank archite...
W19B32XMT: Features: Performance• 2.7~3.6-volt write (program and erase) operations• Fast write operation• Read access time: 70, 90 nS• Typical program/erase cycles: − 100K•...
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The W19B32XMT/B is a 32Mbit, 2.7~3.6 volt dual bank CMOS flash memory organized as 4M × 8 or 2M × 16 bits. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (× 8) data appears on DQ7−DQ0. The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B32XMT/B results in fast program/erase operations with extremely low current consumption (compared to other comparable 3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.