W19B160BT Selling Leads, Price trend, W19B160BT DataSheet download, circuit diagram from SeekIC.com

Features: Performance• 2.7~3.6-volt write (program and erase) operations• Fast write operation− Sector erase time: 0.7s (Typical)− Chip erases time: 25 s (Typical)− Byte/Word programming time: 5/7 µs (Typical)• Read access time: 70 ns• Typical progra...

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SeekIC No. : 004544450 Detail

W19B160BT: Features: Performance• 2.7~3.6-volt write (program and erase) operations• Fast write operation− Sector erase time: 0.7s (Typical)− Chip erases time: 25 s (Typical)− Byt...

W19B160BT Data Sheet

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Part Number:: W19B160BT
Supply Ability:: 5000

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1~5000

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Negotiable

Processing time
15 Days

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Upload time: 2024/11/23

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Product Details

Description

Features:

Performance
• 2.7~3.6-volt write (program and erase) operations
• Fast write operation
− Sector erase time: 0.7s (Typical)
− Chip erases time: 25 s (Typical)
− Byte/Word programming time: 5/7 µs (Typical)
• Read access time: 70 ns
• Typical program/erase cycles:
− 100K
• Twenty-year data retention
• Ultra low power consumption
− Active current (Read): 9mA (Typical)
− Active current (Program/erase): 20mA (Typical)
− Standby current: 0.2 A (Typical)
Architecture
• Sector erases architecture
− One 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors
− Top or bottom boot block configurations available
− Supports full chip erase
• JEDEC standard byte-wide and word-wide pin-outs TTL compatible I/O
• Manufactured on WinStack-S 0.13µm process technology
• Available packages: 48-pin TSOP and 48-ball TFBGA (6x8mm)
Software Features
• Compatible with common Flash Memory Interface (CFI) specification
− Flash device parameters stored directly on the device
− Allows software driver to identify and use a variety of different current and future Flash products
• End of program detection
− Software method: Toggle bit/Data polling
• Erase Suspend /Erase Resume
− Suspend an erase operation to read data or program data.
− Resume erase suspend operation.
• Unlock bypass program command
− Allows the system to program bytes or words to device faster than standard program command.
Hardware Features
• Ready/#Busy output (RY/#BY)
− Detect program or erase cycle completion
• Hardware reset pin (#RESET)
− Reset the internal state machine to the read mode
• Sector Protection
− Sectors can be locked in-system or via programmer
− Temporary Sector Unprotect allows changing data in protected sectors in-system
Temperature range
• Extended temperature range (-20 to 85 )
• Industrial devices ambient temperature(-40 to +85 )

Pinout

Connection Diagram

Specifications

PARAMETER	RATING	UNIT
Storage Temperature Plastic Packages Ambient Temperature with Power Applied Voltage with Respect to Ground , VDD (Note1) A9, #OE, and #RESET (Note 2) All other pins (Note 1) Output Short Circuit Current (Note 3)	-65 to +150 -65 to +125 -0.5 to +4.0 -0.5 to VDD (Max.) -0.5 to VDD +0.5 200	°C °C V V V mA

Notes:
1. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, input or I/O pins may overshoot VSS to -
2.0 V for periods of up to 20 ns. Maximum DC voltage on input or I/O pins is VDD +0.5 V. During voltage transitions, input or I/O pins may overshoot to VDD +2.0 V for periods up to 20 ns.
2. Minimum DC input voltage on pins A9, #OE, and #RESET is -0.5 V. During voltage transitions, A9, #OE, and #RESET may overshoot VSS to -2.0 V for periods of up to 20 ns. Maximum DC input voltage on pin A9 is VDD (Max.) which may overshoot to +14.0 V for periods up to 20 ns. Maximum DC input voltage is +9.5 V which may overshoot to +12.0 V for periods up to 20 nS.
3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

Description

The W19B160B is a 16Mbit, 2.7~3.6 volt CMOS flash memory organized as 2M × 8 or 1M × 16 bits. For flexible erase capability, the 16Mbits of data are divided into one 16Kbyte, two 8Kbyte, one 32Kbyte, and thirty-one 64Kbyte sectors. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (× 8) data appears on DQ7−DQ0. The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B160B results in fast program/erase operations with extremely low current consumption. The device can also be programmed and erased by using standard EPROM programmers.

W19B160BT

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