Features: Performance• 2.7~3.6-volt write (program and erase) operations• Fast write operation• Read access time: 70, 90 nS• Typical program/erase cycles:− 100K• Twenty-year data retention• Ultra low power consumption Architecture• Sector erase archi...
W19B320ST: Features: Performance• 2.7~3.6-volt write (program and erase) operations• Fast write operation• Read access time: 70, 90 nS• Typical program/erase cycles:− 100K• ...
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The W19B320ST/B is a 32Mbit, 2.7~3.6 volt CMOS flash memory organized as 4M × 8 or 2M × 16 bits. For flexible erase capability, the 32 Mbits of data are divided into eight 8KB, and sixty-three 64KB sectors. The word-wide (× 16) data appears on DQ15-DQ0, and byte-wide (× 8) data appears on DQ7−DQ0. The device can be programmed and erased in-system with a standard 2.7~3.6V power supply. A 12-volt VPP is not required. The unique cell architecture of the W19B320ST/B results in fast program/erase operations with extremely low current consumption (compared to other comparable 3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.