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VTT3425LA

SpecificationsMaximum TemperaturesStorage Temperature: ....................-40°C to 100°COperating Temperature:................. -40°C to 100°CContinuous Power Dissipation: ....................50 mWDerate above 30°C: .............................0.71 mW/°CMaximum Current:.............................

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SeekIC No. : 004544142 Detail

VTT3425LA: SpecificationsMaximum TemperaturesStorage Temperature: ....................-40°C to 100°COperating Temperature:................. -40°C to 100°CContinuous Power Dissipation: ....................50 mW...

VTT3425LA Data Sheet

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Part Number:
VTT3425LA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Specifications

Maximum Temperatures
Storage Temperature: ....................-40°C to 100°C
Operating Temperature:................. -40°C to 100°C
Continuous Power Dissipation: ....................50 mW
Derate above 30°C: .............................0.71 mW/°C
Maximum Current:......................................... 25 mA
Lead Soldering Temperature:....................... 260°C
(1.6 mm from case, 5 sec. max.) 


Description

A small area high speed NPN VTT3425LA silicon phototransistor in a 3 mm diameter, lensed plastic package. The package material transmits infrared and blocks visible light. VTT3425LA is spectrally and mechanically matched to the VTE33xxLA series of IREDs.




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