Features: SpecificationsDescriptionA small area high speed NPN VTT3121Esilicon phototransistor in a lensed,hermetic glass to metal sealed,subminiature package.The package design is ideally suited for mounting into P.C.board.The lead welded to the case provides contact to the emitter.VTT3121E isspe...
VTT3121E: Features: SpecificationsDescriptionA small area high speed NPN VTT3121Esilicon phototransistor in a lensed,hermetic glass to metal sealed,subminiature package.The package design is ideally suited fo...
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A small area high speed NPN VTT3121E silicon phototransistor in a lensed,hermetic glass to metal sealed,subminiature package.The package design is ideally suited for mounting into P.C.board.The lead welded to the case provides contact to the emitter.VTT3121E is spectrally and mechically matched to the VTE31xx series of IREDs.
There are some absolute maximum ratings about VTT3121E.Maximum storage temprature is -55 to 125.Maximum operating temperature is -40 to 125.Continuous power dissipation is 50 mW. Derate above 30 is 0.53 mW/.Maximum current is 25 mA.
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