VS12G478

The VS12G478 has the following features including 2048 words x 2-bit Static RAM, ideal for fast cache or control store applications;Functionally compatible with national NM100492 (with the addition of an output latch enable);Very fast: read/write cycle time 5, 6 or 7 ns (Max);Full chip bit purge in 4 cycles;100K ECL compatible inputs and outputs;28-pin ceramic leaded chip carrier (LDCC);Diagnostic serial scan mode;Self-timed operation.

The VS12G478 is a high speed, fully decoded 4096-bit read write self-timed static random access memory organized as 2048 words by 2 bits.This RAM is intended for use in high speed ECL computer applications such as register files, writable control stores, cache RAMS, cache tag RAMS, and addressable translation look aside buffers. This device is I/O compatible with standard F 100K ECL logic, allowing trouble free interfacing in high performance ECL systems.  Operation is from a standard -2.0 Volt power supply, and all inputs are registered and all outputs are latched.The SRAM features a 4 cycle "clear-all-bits-to-zero" purge function.  The purge function is especially useful in multitasking systems with cache tags which require a validity bit purge in a very short time. On-chip circuitry creates an internal write pulse intended to ease system timing. A diagnostic serial scan mode is also supported. The scan function allows examin-ation and modification of internal register states.The VS 126478 is available with a 5 or 7 ns worst case cycle time, and either a read or a write operation can be performed in one cycle.  Total power dissipation for the chip is less than 1 W, and it is packaged in a 28-pin leaded ceramic chip carrier.  The VS12G478 is fabricated in gallium arsenide using the Vitesse H-GaAsTM E/D MES-FET process which achieves high speed and low power dissipation.
                                             
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