VS12G424

The VS12G424 has the following features including 256 x 4 static RAM for cache and control store applications;Registered address, control and data inputs;High speed: 2.5 ns access time from clock to input;Single +2.2 Volt power supply;Write pulse internally generated from clods edge;Fully static operation, equal read and write cycle times;GaAs technology features low sensitivity to radiation;Power dissipation 1 W (typical).

The Vitesse VS12G424 is an ultra-high speed static RAM organized as 256 x 4 bit words and features edge triggered registers at all inputs except OE.  Designed with Vitesse's proprietary enhancemenVdepletion MESFET GaAs technology. The chip operates from a single +2.2V power supply,'and utilizes custom VO levels.Fully static asynchronous internal circuits are used but input signals are loaded into input registers on the rising clock edge.Input data is tranferred to output pads on a write operation. The VS12G424 is packaged in a hermetic ceramic leaded chip carrier for high density system integration.

The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for any use that includes fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for any use where chance of failure is intolerable (i.e., submersible repeater and artificial satellite).
                                             
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